参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current180 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time3 ns
Rds On - Drain-Source Resistance2 Ohms
Transistor Type1 N-Channel MOSFET
Typical Turn-Off Delay Time12 ns
Mounting StyleSMD/SMT
Qg - Gate Charge-
Package / CaseDFN-1006-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ProductMOSFETs
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageROHM Semiconductor RV2C002UNT2L
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time25 ns
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
SeriesRVxC
Factory Pack Quantity8000
Unit Weight0.000786 oz
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 1.2V Drive Nch MOSFET
Pd - Power Dissipation100 mW
Part # AliasesRV2C002UN
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time4 ns
TypeSmall Signal MOSFET
Moisture Sensitivity Level1 (Unlimited)