参数项参数值
参数项参数值
Forward Transconductance - Min18 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time13.2 ns
Rds On - Drain-Source Resistance4.6 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34.7 ns
Qg - Gate Charge16.8 nC
Package / CaseHSOP-8
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageROHM Semiconductor RS1E200GNTB
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time8.4 ns
BrandROHM Semiconductor
Factory Pack Quantity2500
Unit Weight0.002490 oz
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET 4.5V Drive Nch MOSFET
ManufacturerROHM Semiconductor
Part # AliasesRS1E200GN
Pd - Power Dissipation3 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time7.2 ns
Moisture Sensitivity Level1 (Unlimited)