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RGTV60TK65DGVC11

RGTV60TK65DGVC11

厂牌：ROHM
包装：TUBE 450
类目：元器件 > 分立器件 > IGBT晶体管
编号：B000044475521
描述：短路耐量 2µs, 650V 30A,内置快速反向恢复二极管, TO-3PFM,沟槽式场截止型 IGBT
最新价格近期成交30单+
数量价格（含税）
1¥68.1405
100¥48.8181
450¥40.6940
900¥37.6201
2250¥32.4967
4500¥30.5205
库存：420交期：5-10个工作日起订：1增量：1
数量：
X
68.1405（单价）
合计：
￥68.14
商品满500包邮
商品参数
参数项参数值
参数项参数值
Gate-Emitter Leakage Current200 nA
Collector- Emitter Voltage VCEO Max650 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage30 V
Collector-Emitter Saturation Voltage1.5 V
Mounting StyleThrough Hole
Package / CaseTO-3PFM
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
TARIC8541290000
RoHS Details
PackagingTube
SubcategoryIGBTs
ImageROHM Semiconductor RGTV60TK65DGVC11
BrandROHM Semiconductor
Product TypeIGBT Transistors
ManufacturerROHM Semiconductor
Factory Pack Quantity1
USHTS8541290095
Product CategoryIGBT Transistors
DescriptionIGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
Continuous Collector Current at 25 C33 A
Pd - Power Dissipation76 W
Continuous Collector Current Ic Max33 A