参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance80 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time35 ns
MXHTS85412999
CNHTS8541290000
Qg - Gate Charge3.9 nC
Package / CaseTUMT-6
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time11 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RSL020P03FRATR
Product CategoryMOSFET
Unit Weight0.001964 oz
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1 W
Part # AliasesRSL020P03FRA
USHTS8541290095
DescriptionMOSFET Pch -30V Vds -2A 0.14Rds(on) 3.9Qg
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time11 ns