参数项参数值
参数项参数值
Forward Transconductance - Min25 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current30 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time26 ns
Rds On - Drain-Source Resistance4.8 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time300 ns
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge60 nC
Package / CaseHSMT-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time280 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ3C150BCTB
Product CategoryMOSFET
Unit Weight0.005497 oz
Factory Pack Quantity3000
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation20 W
Part # AliasesRQ3C150BC
USHTS8541290095
DescriptionMOSFET Pch -20V -30A Si MOSFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time80 ns