参数项参数值
参数项参数值
Forward Transconductance - Min1.6 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
QualificationAEC-Q101
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance190 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time16 ns
Qg - Gate Charge2.3 nC
Package / CaseSC-95-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time10 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RTQ020N05HZGTR
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1.25 W
USHTS8541290095
DescriptionMOSFET 45V N-CHANNEL 2A
Vds - Drain-Source Breakdown Voltage45 V
Number of Channels1 Channel
Rise Time14 ns
Moisture Sensitivity Level1 (Unlimited)