参数项参数值
参数项参数值
Forward Transconductance - Min6.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current9.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance11.9 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time33 ns
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge16.3 nC
Package / CaseSOP-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time7 ns
TARIC8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RS3E095BNGZETB
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity2500
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation2 W
Part # AliasesRS3E095BN
USHTS8541290095
DescriptionMOSFET Nch 30V 9.5A Si MOSFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time19 ns