参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7 ns
Rds On - Drain-Source Resistance28 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
Mounting StyleSMD/SMT
Package / CaseSOP-8
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingReel
ImageROHM Semiconductor RXH070N03TB1
Channel ModeEnhancement
SubcategoryMOSFETs
BrandROHM Semiconductor
Fall Time8 ns
ManufacturerROHM Semiconductor
Factory Pack Quantity2500
Product CategoryMOSFET
Unit Weight0.054146 oz
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET 30V N-CHANNEL 7A
Pd - Power Dissipation2 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time30 ns