参数项参数值
参数项参数值
Forward Transconductance - Min4.3 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current3.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time9 ns
Transistor Type1 P-Channel
Typical Turn-Off Delay Time50 ns
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge6.5 nC
Package / CaseSOT-346-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time30 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ5C035BCTCL
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
Part # AliasesRQ5C035BC
USHTS8541290095
DescriptionMOSFET Pch -20V -3.5A Si MOSFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time30 ns