参数项参数值
参数项参数值
Forward Transconductance - Min120 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current100 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time46 ns
Width0.6 mm
Height0.4 mm
Transistor Type1 P-Channel
Typical Turn-Off Delay Time325 ns
Length1 mm
Qg - Gate Charge-
Mounting StyleSMD/SMT
Package / CaseDFN-1006-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ImageROHM Semiconductor RV2C001ZPT2L
PackagingCut Tape
PackagingReel
RoHS Details
Channel ModeEnhancement
Fall Time137 ns
SeriesRV2C001ZP
Factory Pack Quantity8000
SubcategoryMOSFETs
Product CategoryMOSFET
BrandROHM Semiconductor
Product TypeMOSFET
Unit Weight0.003130 oz
DescriptionMOSFET 1.2V Drive Pch MOSFET
ManufacturerROHM Semiconductor
Part # AliasesRV2C001ZP
Pd - Power Dissipation100 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time62 ns