参数项参数值
参数项参数值
ConfigurationDual
Forward Transconductance - Min6.5 S, 6.5 S
KRHTS8541299000
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
JPHTS8541290100
Transistor PolarityP-Channel
Id - Continuous Drain Current4.5 A
CAHTS8541290000
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 20 V, + 20 V
ImageROHM Semiconductor SH8J31GZETB
Typical Turn-On Delay Time17 ns, 17 ns
DescriptionMOSFET 60V Pch+Pch Si MOSFET
Rds On - Drain-Source Resistance50 mOhms, 50 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time100 ns, 100 ns
Package / CaseSOP-8
PackagingReel
PackagingCut Tape
PackagingMouseReel
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity2500
Mounting StyleSMD/SMT
BrandROHM Semiconductor
Product TypeMOSFET
ManufacturerROHM Semiconductor
RoHS Details
TARIC8541290000
MXHTS85412999
Qg - Gate Charge40 nC
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time40 ns, 40 ns
CNHTS8541290000
Part # AliasesSH8J31
Pd - Power Dissipation2 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel
Rise Time18 ns, 18 ns