参数项参数值
参数项参数值
Forward Transconductance - Min11 S
TechnologySi
Id - Continuous Drain Current9 A
Transistor PolarityP-Channel
Rds On - Drain-Source Resistance19 mOhms
MXHTS85412999
KRHTS8541299000
Package / CaseSOP-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.030018 oz
ImageROHM Semiconductor SH8J66TB1
BrandROHM Semiconductor
Factory Pack Quantity2500
Pd - Power Dissipation2 W
Product TypeMOSFET
ManufacturerROHM Semiconductor
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET Pch+Pch -30V -9A MOSFET
Vds - Drain-Source Breakdown Voltage30 V
USHTS8541290095