参数项参数值
参数项参数值
Forward Transconductance - Min8 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current13 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8.4 ns
Rds On - Drain-Source Resistance11.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time22.4 ns
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseHSOP-8
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageROHM Semiconductor RS1E130GNTB
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity2500
Fall Time3.1 ns
SubcategoryMOSFETs
Product CategoryMOSFET
BrandROHM Semiconductor
Unit Weight0.002490 oz
ManufacturerROHM Semiconductor
DescriptionMOSFET 4.5V Drive Nch MOSFET
Product TypeMOSFET
USHTS8541290095
Part # AliasesRS1E130GN
Pd - Power Dissipation3 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time4.3 ns