参数项参数值
参数项参数值
Forward Transconductance - Min2.1 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance85 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
CNHTS8541210000
Qg - Gate Charge5 nC
Package / CaseSC-96-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time10 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RSR030N06HZGTL
Unit Weight0.020919 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
USHTS8541290095
DescriptionMOSFET 60V N-CHANNEL 3A
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time12 ns