参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current4.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance35 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time390 ns
Mounting StyleSMD/SMT
Package / CaseSOT-457-6
Qg - Gate Charge31 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RQ6A045ZPTR
PackagingCut Tape
PackagingReel
Channel ModeEnhancement
SubcategoryMOSFETs
BrandROHM Semiconductor
Fall Time215 ns
ManufacturerROHM Semiconductor
Unit Weight0.001374 oz
Product CategoryMOSFET
Factory Pack Quantity3000
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET -12V P-CHANNEL -4.5A
Part # AliasesRQ6A045ZP
Pd - Power Dissipation1.25 W
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels1 Channel