参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current600 mA
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current600 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.3 V
DC Collector/Base Gain hfe Min100
Package / CaseUMT-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
RoHS Details
ImageROHM Semiconductor UM2222AU3T106
Factory Pack Quantity3000
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT TRANS DIGITAL NPN
Pd - Power Dissipation200 mW
USHTS8541290095