参数项参数值
参数项参数值
DC Current Gain hFE Max30
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 100 mA
ConfigurationDual
Transistor PolarityPNP
Width1.25 mm
Height0.9 mm
DC Collector/Base Gain hfe Min20
Length2 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseUMT-6
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor UMB11NTN
SubcategoryTransistors
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors - Pre-Biased
SeriesUMB11N
Unit Weight0.001129 oz
USHTS8541290095
Product CategoryBipolar Transistors - Pre-Biased
DescriptionBipolar Transistors - Pre-Biased DUAL PNP 50V 50MA SOT363
Part # AliasesUMB11N
Pd - Power Dissipation150 mW
Typical Resistor Ratio1
Typical Input Resistor10 kOhms