参数项参数值
参数项参数值
DC Current Gain hFE Max270 at 10 mA, 2 V
Gain Bandwidth Product fT320 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max12 V
Continuous Collector Current500 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
MXHTS85412999
Width1.25 mm
DC Collector/Base Gain hfe Min270
Height0.9 mm
Length2 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseCPT-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageROHM Semiconductor UMX18NTN
RoHS Details
SeriesUMX18N
Factory Pack Quantity3000
BrandROHM Semiconductor
Unit Weight0.000176 oz
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT DUAL NPN 12V 500MA
SubcategoryTransistors
Pd - Power Dissipation150 mW
Part # AliasesUMX18N
USHTS8541290095