参数项参数值
参数项参数值
Forward Transconductance - Min0.2 S
ConfigurationDual
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance900 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time30 ns
Qg - Gate Charge-
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time40 ns
RoHS Details
BrandROHM Semiconductor
ImageROHM Semiconductor UM6J1NTN
Unit Weight0.000265 oz
Factory Pack Quantity3000
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Pd - Power Dissipation150 mW
DescriptionMOSFET TRANS MOSFET PCH 30V 0.2A 6PIN
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time5 ns
Moisture Sensitivity Level1 (Unlimited)