参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
ConfigurationSingle
Collector- Base Voltage VCBO60 V
Continuous Collector Current200 mA
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
CAHTS8542390000
QualificationAEC-Q101
ImageROHM Semiconductor SST3904HZGT116
DescriptionBipolar Transistors - BJT NPN SOT-23 0.2A 40V VCEO
Collector-Emitter Saturation Voltage200 mV, 300 mV
Package / CaseSOT-23-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
DC Collector/Base Gain hfe Min30
Maximum Operating Temperature+ 150 C
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
Mounting StyleSMD/SMT
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
ManufacturerROHM Semiconductor
RoHS Details
TARIC8541210000
MXHTS85423901
SubcategoryTransistors
USHTS8542390001
Unit Weight0.001023 oz
CNHTS8541210000
Part # AliasesSST3904HZG
Pd - Power Dissipation350 mW
Moisture Sensitivity Level1 (Unlimited)