参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT250 MHz
ConfigurationSingle
Collector- Base Voltage VCBO- 40 V
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
CAHTS8542390000
QualificationAEC-Q101
ImageROHM Semiconductor SST3906HZGT116
Product CategoryBipolar Transistors - BJT
Collector-Emitter Saturation Voltage- 250 mV, - 400 mV
Maximum Operating Temperature+ 150 C
Package / CaseSOT-23-3
DescriptionBipolar Transistors - BJT PNP SOT-23 -0.2A -40V VCEO
DC Collector/Base Gain hfe Min30
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
RoHS Details
TARIC8541210000
BrandROHM Semiconductor
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
MXHTS85423901
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
USHTS8542390001
CNHTS8541210000
Part # AliasesSST3906HZG
Pd - Power Dissipation350 mW
Moisture Sensitivity Level1 (Unlimited)