参数项参数值
参数项参数值
DC Current Gain hFE Max68
Peak DC Collector Current- 100 mA
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 30 mA
ConfigurationDual
Transistor PolarityPNP
Width1.25 mm
Height0.9 mm
DC Collector/Base Gain hfe Min68
Length2 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseTUMT-6
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541290000
RoHS Details
ImageROHM Semiconductor UMB2NTN
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryTransistors
BrandROHM Semiconductor
SeriesUMB2N
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
USHTS8541290095
Product CategoryBipolar Transistors - Pre-Biased
DescriptionBipolar Transistors - Pre-Biased DUAL PNP 50V 30MA
Part # AliasesUMB2N
Pd - Power Dissipation150 mW
Typical Resistor Ratio1
Typical Input Resistor47 kOhms