参数项参数值
参数项参数值
DC Current Gain hFE Max325 at 1 mA, 10 V
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current800 mA
Collector- Emitter Voltage VCEO Max50 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.3 V
DC Collector/Base Gain hfe Min30 at 500 mA, 10 V
Package / CaseLCC-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 200 C
Minimum Operating Temperature- 65 C
PackagingReel
PackagingCut Tape
TARIC8541210000
RoHSN
ImageMicrochip / Microsemi 2N2222AUB/TR
BrandMicrochip / Microsemi
Pd - Power Dissipation0.5 W
Factory Pack Quantity100
Product TypeBJTs - Bipolar Transistors
ManufacturerMicrochip
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT BJTs
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)