参数项参数值
参数项参数值
Forward Transconductance - Min8.7 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current10.4 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time4.6 ns
Width6.22 mm
Rds On - Drain-Source Resistance55 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time55 ns
Length6.73 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge44 nC
Mounting StyleSMD/SMT
Package / CaseTO-252-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541290000
Factory Pack Quantity2500
BrandDiodes Incorporated
SeriesZXMP6
Channel ModeEnhancement
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET 60V P-Channel 6.8A MOSFET
TARIC8541290000
ManufacturerDiodes Incorporated
ImageDiodes Incorporated ZXMP6A18KTC
Fall Time23 ns
RoHS Details
Unit Weight0.139332 oz
SubcategoryMOSFETs
Pd - Power Dissipation10.1 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time5.8 ns