参数项参数值
参数项参数值
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.6 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.75 V
DC Collector/Base Gain hfe Min20
Width1.3 mm
Height0.94 mm
Length2.9 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000282 oz
TARIC8541210000
ImageON Semiconductor MMBT4401LT3G
Pd - Power Dissipation225 mW
RoHS Details
Factory Pack Quantity10000
SeriesMMBT4401L
BrandON Semiconductor
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT 600mA 60V NPN
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)