参数项参数值
参数项参数值
Forward Transconductance - Min92 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9.6 ns
Rds On - Drain-Source Resistance4.1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
Width5 mm
Height0.83 mm
Length6 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge69 nC
Package / CasePQFN-8
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time12 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
ImageInfineon / IR IRFH5006TRPBF
RoHS Details
Unit Weight0.007863 oz
Factory Pack Quantity4000
Product TypeMOSFET
BrandInfineon / IR
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
DescriptionMOSFET 60V 1 N-CH HEXFET 4.1mOhms 67nC
Vds - Drain-Source Breakdown Voltage60 V
USHTS8541290095
Number of Channels1 Channel
Rise Time13 ns
Moisture Sensitivity Level1 (Unlimited)