参数项参数值
参数项参数值
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Height1.57 mm
Length6.5 mm
KRHTS8541299000
ManufacturerON Semiconductor
Minimum Operating Temperature- 55 C
JPHTS8541210101
RoHS Details
CAHTS8541210000
Collector-Emitter Saturation Voltage0.3 V
Package / CaseSOT-223-4
Factory Pack Quantity1000
DC Collector/Base Gain hfe Min40
BrandON Semiconductor
TARIC8541210000
Maximum Operating Temperature+ 150 C
Width3.5 mm
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor PZT3904T1G
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT 0.2A 40V 1.5W NPN
Product TypeBJTs - Bipolar Transistors
MXHTS85412101
SeriesPZT3904
USHTS8541290075
Unit Weight0.003951 oz
CNHTS8541290000
Pd - Power Dissipation1.5 W
Moisture Sensitivity Level1 (Unlimited)