BSC100N06LS3 G

BSC100N06LS3 G

厂牌：Infineon Technologies

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000044620021

描述：Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min32 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.2 V

TechnologySi

Id - Continuous Drain Current50 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time8 ns

Width5.15 mm

Rds On - Drain-Source Resistance7.8 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time19 ns

Height1.27 mm

Length5.9 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge45 nC

Mounting StyleSMD/SMT

Package / CaseTDSON-8

JPHTS8541290100

CAHTS8541290000

PackagingCut Tape

PackagingMouseReel

PackagingReel

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

CNHTS8541290000

Factory Pack Quantity5000

BrandInfineon Technologies

SeriesOptiMOS 3

Product TypeMOSFET

Channel ModeEnhancement

ManufacturerInfineon

DescriptionMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3

TARIC8541290000

ImageInfineon Technologies BSC100N06LS3 G

Product CategoryMOSFET

Fall Time8 ns

RoHS Details

Unit Weight0.003527 oz

SubcategoryMOSFETs

Part # AliasesSP000453664 BSC1N6LS3GXT BSC100N06LS3GATMA1

Pd - Power Dissipation50 W

USHTS8541290095

TradenameOptiMOS

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Rise Time58 ns