参数项参数值
参数项参数值
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current600 mA
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current600 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage1 V
DC Collector/Base Gain hfe Min35
MXHTS85412101
KRHTS8541219000
Package / CaseSC-70-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541210000
Unit Weight0.000988 oz
Pd - Power Dissipation150 mW
SeriesMMBT2222AW
BrandON Semiconductor
ImageON Semiconductor SMMBT2222AWT1G
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
USHTS8541210075
DescriptionBipolar Transistors - BJT SS GP XSTR NPN 40V
Moisture Sensitivity Level1 (Unlimited)