参数项参数值
参数项参数值
Forward Transconductance - Min4.6 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time5.6 ns
Rds On - Drain-Source Resistance62 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time15.3 ns
Height1.1 mm
Width1.3 mm
Length2.9 mm
MXHTS85412999
Qg - Gate Charge5 nC
KRHTS8541219000
Package / CasePG-SOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541210000
Fall Time2.8 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.001411 oz
Pd - Power Dissipation500 mW
SeriesBSS308
BrandInfineon Technologies
Part # AliasesBSS308PE H6327 SP000928942
ImageInfineon Technologies BSS308PEH6327XTSA1
ManufacturerInfineon
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage30 V
Product CategoryMOSFET
USHTS8541210095
Number of Channels1 Channel
Rise Time7.7 ns
DescriptionMOSFET P-Ch -30V -2A SOT-23-3
Moisture Sensitivity Level1 (Unlimited)