VBZA4435

VBZA4435

厂牌：VBsemi(微碧半导体)

包装：Tape 4000

类目：元器件 > 分立器件 > MOSFET

编号：B000044672988

描述：晶体管 - FET，MOSFET MOS管，P沟道,-30V,-9A,18mΩ@-10V

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage- 4 V

TechnologySi

Minimum Operating Temperature- 55 C

Transistor PolarityP-Channel

Id - Continuous Drain Current8 A

KRHTS8541299000

JPHTS8541290100

Vgs - Gate-Source Voltage- 20 V, + 20 V

CAHTS8541290000

Height1.75 mm

Typical Turn-On Delay Time16 ns

ImageInfineon / IR SI4435DYTRPBF

Product CategoryMOSFET

Rds On - Drain-Source Resistance35 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time130 ns

Maximum Operating Temperature+ 150 C

Package / CaseSO-8

DescriptionMOSFET HEXFET P-CH Low 0.020 Ohm -30V

PackagingCut Tape

PackagingMouseReel

PackagingReel

Width3.9 mm

Mounting StyleSMD/SMT

TARIC8541290000

BrandInfineon / IR

Factory Pack Quantity4000

Qg - Gate Charge40 nC

MXHTS85412999

Product TypeMOSFET

ManufacturerInfineon

RoHS Details

SubcategoryMOSFETs

USHTS8541290095

Channel ModeEnhancement

Fall Time90 ns

Unit Weight0.019048 oz

CNHTS8541290000

Pd - Power Dissipation2.5 W

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time76 ns

TypeHEXFET Power MOSFET