参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current20.2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width4.4 mm
Rds On - Drain-Source Resistance170 mOhms
Transistor Type1 N-Channel
Height15.65 mm
Length10 mm
MXHTS85412101
KRHTS8541299000
Mounting StyleThrough Hole
Package / CaseTO-220-3
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
PackagingTube
TARIC8541210000
RoHS Details
ImageInfineon Technologies IPP60R190E6
SubcategoryMOSFETs
BrandInfineon Technologies
ManufacturerInfineon
SeriesCoolMOS E6
Factory Pack Quantity500
Unit Weight0.211644 oz
Product CategoryMOSFET
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET N-Ch 650V 20.2A TO220-3 CoolMOS E6
Pd - Power Dissipation151 W
Part # AliasesIPP6R19E6XK SP000797378 IPP60R190E6XKSA1
TradenameCoolMOS
Number of Channels1 Channel