参数项参数值
参数项参数值
Forward Transconductance - Min122 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.9 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current100 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85423901
Typical Turn-On Delay Time5.2 ns
Length6 mm
Height1 mm
KRHTS8541299000
Rds On - Drain-Source Resistance9.8 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CNHTS8541290000
CAHTS8541290000
Package / CaseVSONP-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Qg - Gate Charge17 nC
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity2500
ImageTexas Instruments CSD18534Q5A
Product CategoryMOSFET
BrandTexas Instruments
RoHS Details
TARIC8542399000
SeriesCSD18534Q5A
Product TypeMOSFET
DescriptionMOSFET 60V N-Ch NexFET Pwr MOSFET
SubcategoryMOSFETs
ManufacturerTexas Instruments
Channel ModeEnhancement
Unit Weight0.013404 oz
USHTS8541290095
Pd - Power Dissipation3.1 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time5.5 ns
Moisture Sensitivity Level1 (Unlimited)