CSD18511Q5A

CSD18511Q5A

厂牌：德州仪器(TI)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000044829664

描述：MOSFETs 40-V N channel NexF ET power MOSFET si A A 595-CSD18511Q5AT

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min5.2 S

CNHTS8541290000

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.5 V

TechnologySi

Id - Continuous Drain Current100 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time6 ns

Height1 mm

MXHTS85412999

Length6 mm

Rds On - Drain-Source Resistance2.7 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time24 ns

Package / CaseVSONP-8

KRHTS8541299000

Maximum Operating Temperature+ 175 C

PackagingReel

PackagingCut Tape

PackagingMouseReel

Mounting StyleSMD/SMT

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Qg - Gate Charge82 nC

TARIC8541290000

ManufacturerTexas Instruments

Factory Pack Quantity2500

BrandTexas Instruments

RoHS Details

ImageTexas Instruments CSD18511Q5A

SeriesCSD18511Q5A

SubcategoryMOSFETs

Product CategoryMOSFET

Product TypeMOSFET

DescriptionMOSFET

Channel ModeEnhancement

USHTS8541290095

Fall Time5 ns

Unit Weight0.003041 oz

Pd - Power Dissipation104 W

TradenameNexFET

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Rise Time15 ns