参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max40 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Width3.93 mm
MXHTS85412101
Height4.7 mm
Length4.7 mm
KRHTS8541219000
CNHTS8541210000
Package / CaseTO-92-3 Kinked Lead
Mounting StyleThrough Hole
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingReel
TARIC8541210000
RoHS Details
Series2N3906
BrandON Semiconductor / Fairchild
ImageON Semiconductor / Fairchild 2N3906TF
Unit Weight0.008466 oz
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity2000
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
Pd - Power Dissipation625 mW
Part # Aliases2N3906TF_NL
DescriptionBipolar Transistors - BJT PNP Transistor General Purpose
USHTS8541210095
Moisture Sensitivity LevelNot Applicable