参数项参数值
参数项参数值
Forward Transconductance - Min12 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time18 ns
Rds On - Drain-Source Resistance270 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
Qg - Gate Charge120 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time43 ns
PackagingTube
BrandVishay Semiconductors
RoHS Details
Product CategoryMOSFET
ImageVishay Semiconductors IRFP460LCPBF
SeriesIRFP
Unit Weight1.340411 oz
SubcategoryMOSFETs
Factory Pack Quantity500
ManufacturerVishay
Product TypeMOSFET
Pd - Power Dissipation280 W
DescriptionMOSFET 500V N-CH HEXFET
Vds - Drain-Source Breakdown Voltage500 V
Number of Channels1 Channel
Rise Time77 ns
Moisture Sensitivity Level1 (Unlimited)