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商品参数
参数项参数值
参数项参数值
Gain Bandwidth Product fT3 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min40
Width2.7 mm
Height10.8 mm
Length7.8 mm
MXHTS85412101
KRHTS8541299000
Package / CaseSOT-32-3
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 65 C
CAHTS8541290000
CNHTS8541210000
PackagingTube
Unit Weight0.002116 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation25 W
ImageSTMicroelectronics BD237
SeriesBD237
Factory Pack Quantity2000
BrandSTMicroelectronics
ManufacturerSTMicroelectronics
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN General Purpose