参数项参数值
参数项参数值
Gain Bandwidth Product fT3 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min40
Width2.66 mm
Height11.04 mm
Length7.74 mm
Package / CaseTO-225-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingBulk
Unit Weight0.023986 oz
RoHS Details
Pd - Power Dissipation25 W
SeriesBD237
ImageON Semiconductor BD237G
BrandON Semiconductor
Factory Pack Quantity500
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerON Semiconductor
DescriptionBipolar Transistors - BJT 2A 80V 25W NPN
Moisture Sensitivity LevelNot Applicable