参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current50 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance6 mOhms
Width6.22 mm
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Length6.5 mm
Height2.3 mm
MXHTS85412999
KRHTS8541299000
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingReel
CNHTS8541210000
BrandInfineon Technologies
Factory Pack Quantity2500
ManufacturerInfineon
TARIC8541290000
Product CategoryMOSFET
Channel ModeEnhancement
Product TypeMOSFET
Fall Time3 ns
RoHS Details
DescriptionMOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3
ImageInfineon Technologies IPD060N03L G
Unit Weight0.139332 oz
SubcategoryMOSFETs
USHTS8541290095
Part # AliasesSP000236948 IPD6N3LGXT IPD060N03LGBTMA1
Pd - Power Dissipation56 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time3 ns