参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current200 mA
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.3 V
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min30
QualificationAEC-Q101
MXHTS85412101
PackagingReel
PackagingMouseReel
ImageON Semiconductor SMMBT3904WT1G
KRHTS8541219000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Package / CaseSC-70-3
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
TARIC8541210000
Unit Weight0.000988 oz
Pd - Power Dissipation150 mW
SeriesMMBT3904W
DescriptionBipolar Transistors - BJT SS GP XSTR NPN 40V
BrandON Semiconductor
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)