参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current200 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage0.3 V
MXHTS85412101
DC Collector/Base Gain hfe Min30
KRHTS8541219000
CNHTS8541210000
Package / CaseSOT-416-3
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541210000
RoHS Details
SeriesSMMBT3904TT1G
ImageON Semiconductor SMMBT3904TT1G
BrandON Semiconductor
Unit Weight0.000212 oz
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Pd - Power Dissipation300 mW
DescriptionBipolar Transistors - BJT SS SC75 GP XSTR NPN 60V
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)