参数项参数值
参数项参数值
Collector- Emitter Voltage VCEO Max- 40 V
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
MXHTS85412101
KRHTS8541219000
Package / CaseX1-DFN1006-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
RoHS Details
Unit Weight0.282192 oz
SeriesMMBT39
BrandDiodes Incorporated
ImageDiodes Incorporated MMBT3906LP-7B
ManufacturerDiodes Incorporated
Pd - Power Dissipation250 mW
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Factory Pack Quantity10000
Product TypeBJTs - Bipolar Transistors
USHTS8541210095
DescriptionBipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
Moisture Sensitivity Level1 (Unlimited)