参数项参数值
参数项参数值
DC Current Gain hFE Max60 at 100 uA, 1 V
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max40 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO6 V
MXHTS85412101
QualificationAEC-Q101
Length3 mm
Width1.4 mm
Height1 mm
KRHTS8541219000
DC Collector/Base Gain hfe Min60
Minimum Operating Temperature- 65 C
JPHTS8541210101
Package / CaseSOT-23-3
CAHTS8541210000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageNexperia MMBT3906,215
Product TypeBJTs - Bipolar Transistors
BrandNexperia
TARIC8541210000
DescriptionBipolar Transistors - BJT TRANS SW TAPE-7
RoHS Details
Product CategoryBipolar Transistors - BJT
ManufacturerNexperia
SubcategoryTransistors
Unit Weight0.000265 oz
USHTS8541210075
Part # Aliases933864370215
Pd - Power Dissipation250 mW
Moisture Sensitivity Level1 (Unlimited)