参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO- 40 V
Collector- Emitter Voltage VCEO Max- 40 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 0.85 V
DC Collector/Base Gain hfe Min30
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
Unit Weight0.000176 oz
SeriesMMBT3906W
Pd - Power Dissipation150 mW
BrandON Semiconductor
ImageON Semiconductor SMMBT3906WT1G
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN Bipolar Transistor
Moisture Sensitivity Level1 (Unlimited)