参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage400 mV
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current17.5 A
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time9.1 ns
MXHTS85412999
CNHTS8541290000
Rds On - Drain-Source Resistance5.5 mOhms
KRHTS8541299000
Transistor Type1 P-Channel
Typical Turn-Off Delay Time146 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CasePowerDI3333-8
PackagingReel
PackagingCut Tape
PackagingMouseReel
Qg - Gate Charge64 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMP2006UFG-7
Factory Pack Quantity2000
SeriesDMP2006
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC
Channel ModeEnhancement
Fall Time104 ns
USHTS8541290095
Unit Weight0.002540 oz
Pd - Power Dissipation41 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time19 ns
Moisture Sensitivity Level1 (Unlimited)