参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.6 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
MXHTS85412999
Width1.6 mm
Length2.9 mm
Height1.1 mm
KRHTS8541299000
Collector-Emitter Saturation Voltage1.2 V
DC Collector/Base Gain hfe Min20
JPHTS8541290100
CNHTS8541290000
CAHTS8541290000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
BrandROHM Semiconductor
RoHS Details
TARIC8541290000
SeriesMMST4401
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN 40V 0.6A
SubcategoryTransistors
ManufacturerROHM Semiconductor
Unit Weight0.001478 oz
USHTS8541290095
Part # AliasesMMST4401
Pd - Power Dissipation350 mW