参数项参数值
参数项参数值
DC Current Gain hFE Max160 at 150 mA, 2 V
Gain Bandwidth Product fT130 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max80 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage0.5 V
MXHTS85412101
DC Collector/Base Gain hfe Min63 at 150 mA, 2 V
KRHTS8541299000
CNHTS8541210000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
SeriesBCP56
ImageON Semiconductor SBCP56-10T1G
BrandON Semiconductor
Unit Weight0.003951 oz
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Pd - Power Dissipation1.5 W
DescriptionBipolar Transistors - BJT SS GP XSTR NPN 80V
USHTS8541290075
Moisture Sensitivity Level1 (Unlimited)