参数项参数值
参数项参数值
Gain Bandwidth Product fT130 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.5 V
DC Collector/Base Gain hfe Min25
Width3.5 mm
Height1.57 mm
Length6.5 mm
MXHTS85412101
KRHTS8541299000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
Unit Weight0.003951 oz
Pd - Power Dissipation1.5 W
ImageON Semiconductor BCP56-10T1G
SeriesBCP56
BrandON Semiconductor
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerON Semiconductor
USHTS8541290075
DescriptionBipolar Transistors - BJT 1A 100V NPN
Moisture Sensitivity Level1 (Unlimited)