参数项参数值
参数项参数值
Gain Bandwidth Product fT125 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max80 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min63 at 150 mA, 2 V
Width3.7 mm
Height1.65 mm
Length6.7 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541290000
Unit Weight0.003951 oz
RoHS Details
SeriesBCP56
Pd - Power Dissipation2000 mW
BrandDiodes Incorporated
ImageDiodes Incorporated BCP5610TA
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
SubcategoryTransistors
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
USHTS8541290095
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
Moisture Sensitivity Level1 (Unlimited)