参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current0.6 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
MXHTS85412101
Length2.9 mm
Width1.3 mm
Height0.94 mm
KRHTS8541219000
Collector-Emitter Saturation Voltage1.6 V
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseSOT-23-3
CAHTS8541210000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor MMBT2222LT1G
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
TARIC8541210000
DescriptionBipolar Transistors - BJT SS SOT23 GP XSTR NPN 30V
RoHS Details
Product CategoryBipolar Transistors - BJT
SeriesMMBT2222L
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.000282 oz
USHTS8541210095
Pd - Power Dissipation225 mW
Moisture Sensitivity Level1 (Unlimited)